Solid-State-Devices

Contains the mini-project done in the course EE3001

Design of silicon PIN photodetector according to the given specifications

For the value of W = 0.00089 cm and d = 0.0086 cm, the value of various parameters are found out to be:

1. Dark current: 2.1225*exp(-18)

2. Responsivity : 0.456192 A/W

3. Capacitance : 6.8*exp(-14) F

4. Transit time: 8.9*exp(-11) s

5. V_rev minimum : ~22.25 V

6. V_rev maximum : ~175 V