Skip to content

Commit

Permalink
Add files via upload
Browse files Browse the repository at this point in the history
JEDEC DDR Spec, 2005. 64Mb-1Gb (8MB-256MB)

p.5/85 "The purpose of this Standard is to define the minimum set of requirements for JEDEC
compliant 64Mb through 1Gb, X4/X8/X16 DDR SDRAMs."

p.7/85 (Page 1)
"DOUBLE DATA RATE (DDR) SDRAM SPECIFICATION
16 M X4 (4 M X4 X4 banks), 8 M X8 (2 M X8 X4 banks), 4 M X16 (1 M X16 X4 banks)"
Mb or MB? As the spec defines 64Mb-1Gb, It is likely referring to 2MB RAM-64MB sticks) 

"• VDDQ: +2.5 V ±0.2 V for DDR 200, 266, or 333
+2.6 ±0.1 V for DDR 400
• VDD:
+3.3 V ±0.3 V or +2.5 V ±0.2 V for DDR 200, 266,
or 333
+2.6 ±0.1 V for DDR 400"


p.66/85 (Page 60) "TABLE 23: Full Strength Driver Characteristics 
Voltage (V)
Pull-- Down Current (mA)
Pull-- Up Current (mA)
Nominal
Low Nominal
High Minimum Maximum Nominal
Low Nominal
High Minimum Maximum
0.1(V) 6.0 6.8 4.6 9.6 --6.1 --7.6 --4.6 --10.0
0.2    12.2 13.5 9.2 18.2 --12.2 --14.5 --9.2 --20.0"

p.68/85 (Page 62) "100-200mV power consumption
TABLE 24: Weak Driver Characteristics
Pull-- Down Current (mA)
Pull-- Up Current (mA)
Voltage
V
lt
(V) Nominal Low Nominal High Min Max Nominal
Low Nominal
High Min Max
0.1 3.4 3.8 2.6 5 --3.5 --4.3 --2.6 --5
0.2 6.9 7.6 5.2 9.9 --6.9 --8.2 --5.2 --9.9"

https://github.com/opencomputeproject/ODSA-BoW/blob/master/spec/bow_specification/bow_specification.mdk#bowmodes
(line 357-360)
"In all modes, the data must be clocked DDR: 
the chip-to-chip data wire bit rate is double the clock wire frequency.
All BoW interfaces faster than BoW-64 should also be able to support BoW-64.
Supporting rates other than the defined modes is an implementation choice."

Line 972-974:

"All BoW implementations must support signaling based on a 0.75 V "I/O voltage".
BoW PHYs may also support higher or lower signaling 
voltages, but must support 0.75 V based signaling for interoperability. "

Bunch of Wires Implementation idea: set compatibility of DDR to 0.7V, but support underclocking all the way to 0.1V & 0.2V, which, according to p.68/85 (Page 62), consumes as little as 2.6mA (min for pull down current), and 5mA for Max. At Full Strength Driver, 100mV DDR consumes 4.6mA-9.6mA. However, it is unclear whether this is continuously running, and power consumption was likely measured at a higher node- 90nm or even 130nm, not 28nm RAM (a 2005 spec).
  • Loading branch information
hatonthecat authored Jan 23, 2024
1 parent 82fe967 commit 63be078
Showing 1 changed file with 0 additions and 0 deletions.
Binary file added JESD79E.pdf
Binary file not shown.

1 comment on commit 63be078

@hatonthecat
Copy link
Collaborator Author

@hatonthecat hatonthecat commented on 63be078 Jan 23, 2024

Choose a reason for hiding this comment

The reason will be displayed to describe this comment to others. Learn more.

8MB-128MB*, not 8MB-256MB. (Also 2MB sticks x4 = 8MB or 64Mb & 16MB sticks x 8 =128MB; 32MB x 4 =128MB or 1Gbps; 16Mb-128Mb x 4= 2MB-16MB sticks x4=8MB-64MB; or eight 16MB sticks = 128MB if motherboards supported 8 banks back then)

Pull-down and Pull-up current: not assuming RAM can run at that speed and consume that power, but exploring whether it can be clocked at the same rate of the processor- 30-50MHz.
https://semiengineering.com/near-threshold-computing-gets-a-boost/ (suggests 300-400mV), but standard memory cells do not work below 600mV:

"“A memory cell as provided by a foundry will not operate in the near-threshold region. If you need it to operate at a low voltage, you need a custom memory. This is because of the required stability of the bitcells. You are trading this off with area, access time, and stability. As you lower the Vdd on a six-transistor bitcell, the signal-to-noise ratio essentially goes to zero. In order to go below about 600mV, you need to augment the design, and that typically means separating the read and write functions within the cell, and that means you need to go to an 8-transistor cell or 10-transistor cell. That adds a lot of complexity. Most people will operate the memory at a higher voltage level and use level shifters.”"

Please sign in to comment.